A Novel Dilute Antimony InGaAsSb Channel High Electron Mobility Transistor
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === This work reports, a high electron-mobility transistor (HEMT) using a dilute antimony In0.2Ga0.8As(Sb) channel, grown by the molecular beam epitaxy (MBE) system. The advantages by introducing the surfactant-like Sb atoms during growth of InGaAsN/GaAs quantum...
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ndltd-TW-094NCKU54280312016-05-30T04:21:58Z http://ndltd.ncl.edu.tw/handle/08327497435796958237 A Novel Dilute Antimony InGaAsSb Channel High Electron Mobility Transistor 新型砷化銦鎵銻通道高速電晶體 Tsung-Yeh Wu 吳宗曄 碩士 國立成功大學 微電子工程研究所碩博士班 94 This work reports, a high electron-mobility transistor (HEMT) using a dilute antimony In0.2Ga0.8As(Sb) channel, grown by the molecular beam epitaxy (MBE) system. The advantages by introducing the surfactant-like Sb atoms during growth of InGaAsN/GaAs quantum well (QW) consist of the suppression of the three-dimensional growth and the improved interfacial quality of the QW heterostructure. Besides, the present device exhibits better dc characteristics, highly stable thermal and frequency characteristics due to the improvement in the channel layer quality by using an In0.2Ga0.8As(Sb) channel. Distinguished device characteristics for GaAs/In0.2Ga0.8As(Sb) HEMT and conventional GaAs/In0.2Ga0.8As HEMT, with the gate dimensions of 1.2*200um2, include thermal threshold coefficient (¶Vth/¶T) is low to be -1.54 (-1.77) mV/K, gate-voltage swing (GVS) of 1.17 (1.15) V, peak extrinsic transconductance (gm, max) of 178 (166) mS/mm, and the current drive capability (IDSS) of 171 (157) mA/mm. The microwave characteristics for GaAs/In0.2Ga0.8As(Sb) HEMT and conventional GaAs/In0.2Ga0.8As HEMT, the unity gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 25.6 (20.6) GHz and 28.3 (25.6) GHz, respectively. Wei-Chu Hsu 許渭州 2006 學位論文 ; thesis 58 en_US |
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碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === This work reports, a high electron-mobility transistor (HEMT) using a dilute antimony In0.2Ga0.8As(Sb) channel, grown by the molecular beam epitaxy (MBE) system. The advantages by introducing the surfactant-like Sb atoms during growth of InGaAsN/GaAs quantum well (QW) consist of the suppression of the three-dimensional growth and the improved interfacial quality of the QW heterostructure.
Besides, the present device exhibits better dc characteristics, highly stable thermal and frequency characteristics due to the improvement in the channel layer quality by using an In0.2Ga0.8As(Sb) channel.
Distinguished device characteristics for GaAs/In0.2Ga0.8As(Sb) HEMT and conventional GaAs/In0.2Ga0.8As HEMT, with the gate dimensions of 1.2*200um2, include thermal threshold coefficient (¶Vth/¶T) is low to be -1.54 (-1.77) mV/K, gate-voltage swing (GVS) of 1.17 (1.15) V, peak extrinsic transconductance (gm, max) of 178 (166) mS/mm, and the current drive capability (IDSS) of 171 (157) mA/mm. The microwave characteristics for GaAs/In0.2Ga0.8As(Sb) HEMT and conventional GaAs/In0.2Ga0.8As HEMT, the unity gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) are 25.6 (20.6) GHz and 28.3 (25.6) GHz, respectively.
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author2 |
Wei-Chu Hsu |
author_facet |
Wei-Chu Hsu Tsung-Yeh Wu 吳宗曄 |
author |
Tsung-Yeh Wu 吳宗曄 |
spellingShingle |
Tsung-Yeh Wu 吳宗曄 A Novel Dilute Antimony InGaAsSb Channel High Electron Mobility Transistor |
author_sort |
Tsung-Yeh Wu |
title |
A Novel Dilute Antimony InGaAsSb Channel High Electron Mobility Transistor |
title_short |
A Novel Dilute Antimony InGaAsSb Channel High Electron Mobility Transistor |
title_full |
A Novel Dilute Antimony InGaAsSb Channel High Electron Mobility Transistor |
title_fullStr |
A Novel Dilute Antimony InGaAsSb Channel High Electron Mobility Transistor |
title_full_unstemmed |
A Novel Dilute Antimony InGaAsSb Channel High Electron Mobility Transistor |
title_sort |
novel dilute antimony ingaassb channel high electron mobility transistor |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/08327497435796958237 |
work_keys_str_mv |
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