Investigation of Thin Film Bulk Acoustic-wave Resonators Using Amorphous AlN as Supporting Layers
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 94 === The paper presents the analysis and fabrication of thin film bulk acoustic wave resonator(FBAR). The FBAR structures are made of piezoelectric aluminum nitride layers on silicon wafer using the technique of RF magnetron sputtering. Aluminum and platinum are us...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79078563275965964162 |