Study of SiO2 thin films in MIS devices at extremely low temperature by ICP-CVD process
碩士 === 國立成功大學 === 微機電系統工程研究所 === 94 === Scaling down the electric device dimension is an inevitable tendency with each new generation in semiconductor industry. While the dimensions of devices continue to shrink, the thickness of the insulator layer is also reduced. The shrinkage of the oxide thickn...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42349509207766922759 |