Study On Complementary Metal Oxide Semiconductor Integrated Circuit Comparator For System Applications

• Main Authors: Kuo-Tung Chung, 董國鐘
• Other Authors: Tai-Ping Sun
• Format: Others
• Language: en_US
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/73055855659624117620

碩士 === 國立暨南國際大學 === 電機工程學系 === 94 === The major objective of this thesis is to set up testing procedures and key electrical parameter for low-power comparators. The 100umX200um chip size of two-stage comparator has been fabricated in 0.5um 1P1M BiCMOS process technology. The results of measurement show that the two stage comparator has 75dB DC gain , unity gain bandwidth 90MHZ , operation voltage 2.2V~3.6V, the 168kHZ fast working speed, and 1.81mV input offset. The low battery detection system is composed of a comparator with hysteresis type a class AB output driver circuit for LED application. The work principle of design will be detailed in this thesis. The Finally, the conclusion and future work of comparator application will be used in the low voltage and low power system application. Keywords：comparator , hysteresis , battery detection , power amplifier.