Impact of Metal/Semiconductor Interface and Surface States on Electrical Properties of Silicon Nano Wire Devices
碩士 === 國立暨南國際大學 === 電機工程學系 === 94 === A chemical gating CMOS inverter has successfully demonstrated and characterized in this thesis. Nanowire FETs ( NW FETs ), fabricated on silicon-on-insulator wafer, are defined by e-beam lithography. By raising doping concentration and forming TiSi2 in source an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85045326034392908801 |