The Application of RF Sputtered AlN on the Gate Insulator of OTFTs
碩士 === 國立交通大學 === 光電工程系所 === 94 === In this thesis, the low-temperature (25℃-250℃) sputtered aluminum nitride (AlN) film was deposited as the gate insulator in organic thin film transistors (OTFTs). In contrary to the conventional high-k dielectrics, the AlN film has a very low dielectric leakage a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48140985117014757987 |