Metal Induced Lateral Crystallization of a-Si for Low Temperature Polycrystalline Silicon Thin Film Transistor-Growth Thermodynamic、Kinetics and Device Performance
博士 === 國立交通大學 === 材料科學與工程系所 === 94 === A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). Pd and Ni are in widespread use. The metal layer was generally deposited by traditional Physical Vapor deposition (PVD) method. However,...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13748144268896017552 |