應用在無線通訊的低雜訊高電子遷移率電晶體之線性度的研究與改善
博士 === 國立交通大學 === 材料科學與工程系所 === 94 === In this paper, high-electron-mobility transistors (HEMTs) with doping profile modification are discussed for device linearity improvement. The modification was based on the third-order intermodulation distortion (IM3) and the third-order intercept point (IP3) a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91345198970532203073 |