Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs
碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === In this study, a low contact resistivity Pd/Ge/Cu ohmic contact to n-type GaAs has been successfully developed. The Au-free fully Cu-metallized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs also has been successfully fabricated for the first time....
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ndltd-TW-094NCTU51590462016-05-27T04:18:36Z http://ndltd.ncl.edu.tw/handle/27606966960858836731 Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs 應用鈀/鍺/銅歐姆接觸至全面銅金屬化之磷化銦鎵/砷化鎵異質接面雙載子電晶體 Chia-Ching Lin 林家慶 碩士 國立交通大學 材料科學與工程系所 94 In this study, a low contact resistivity Pd/Ge/Cu ohmic contact to n-type GaAs has been successfully developed. The Au-free fully Cu-metallized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs also has been successfully fabricated for the first time. The Pd (150 Å)/Ge (1500 Å)/Cu (1500 Å) ohmic contact exhibits a very low contact resistivity of 5.73 x 10-7 Ω-cm2 at a low annealing temperature (250 °C). The ohmic contact formation mechanisms and microstructure evolution were investigated using x-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and energy dispersive spectrometer (EDX). The thermal stability test of the Pd/Ge/Cu ohmic contact was also performed at 250 °C for 24 hours and showed no obvious degradation on Pd/Ge/Cu ohmic contact after the annealing. The Pd/Ge/Cu ohmic contact was applied to fully Cu-metallized InGaP/GaAs HBTs. In this fully Cu-metallized HBT, Pt/Ti/Pt/Cu was used as the base metal, SiNx was used for passivation, and Ti/Pt/Cu was used for interconnect metals with Pt as the diffusion barrier. The common emitter I-V curves and Gummel plot of these Cu-metallized HBTs using Pd/Ge/Cu ohmic contact showed similar electrical characteristics as those for HBTs metallized with conventional Au-metallized HBTs. The cutoff frequency (fT) of 3x20-μm2-emitter-area devices was about 38GHz. During both the current-accelerated stress test (110 kA/cm2 stress for 24h) and the thermal stability test (annealing at 250°C for 24 hours), for the fully Cu-metallized HBT with Pd/Ge/Cu ohmic contact showed almost no obvious degradation in electrical characteristics. The results show that the novel Pd/Ge/Cu ohmic contact can be used on Au-free fully Cu-metallized InGaP/GaAs HBTs, and exhibit good device performance. Edward Yi Chang 張翼 2006 學位論文 ; thesis 73 en_US |
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碩士 === 國立交通大學 === 材料科學與工程系所 === 94 === In this study, a low contact resistivity Pd/Ge/Cu ohmic contact to n-type GaAs has been successfully developed. The Au-free fully Cu-metallized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs also has been successfully fabricated for the first time.
The Pd (150 Å)/Ge (1500 Å)/Cu (1500 Å) ohmic contact exhibits a very low contact resistivity of 5.73 x 10-7 Ω-cm2 at a low annealing temperature (250 °C). The ohmic contact formation mechanisms and microstructure evolution were investigated using x-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and energy dispersive spectrometer (EDX). The thermal stability test of the Pd/Ge/Cu ohmic contact was also performed at 250 °C for 24 hours and showed no obvious degradation on Pd/Ge/Cu ohmic contact after the annealing.
The Pd/Ge/Cu ohmic contact was applied to fully Cu-metallized InGaP/GaAs HBTs. In this fully Cu-metallized HBT, Pt/Ti/Pt/Cu was used as the base metal, SiNx was used for passivation, and Ti/Pt/Cu was used for interconnect metals with Pt as the diffusion barrier. The common emitter I-V curves and Gummel plot of these Cu-metallized HBTs using Pd/Ge/Cu ohmic contact showed similar electrical characteristics as those for HBTs metallized with conventional Au-metallized HBTs. The cutoff frequency (fT) of 3x20-μm2-emitter-area devices was about 38GHz. During both the current-accelerated stress test (110 kA/cm2 stress for 24h) and the thermal stability test (annealing at 250°C for 24 hours), for the fully Cu-metallized HBT with Pd/Ge/Cu ohmic contact showed almost no obvious degradation in electrical characteristics. The results show that the novel Pd/Ge/Cu ohmic contact can be used on Au-free fully Cu-metallized InGaP/GaAs HBTs, and exhibit good device performance.
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author2 |
Edward Yi Chang |
author_facet |
Edward Yi Chang Chia-Ching Lin 林家慶 |
author |
Chia-Ching Lin 林家慶 |
spellingShingle |
Chia-Ching Lin 林家慶 Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs |
author_sort |
Chia-Ching Lin |
title |
Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs |
title_short |
Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs |
title_full |
Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs |
title_fullStr |
Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs |
title_full_unstemmed |
Au-Free Fully Cu-Metallized InGaP/GaAs HBTs Using Pd/Ge/Cu Ohmic Contact to N-type GaAs |
title_sort |
au-free fully cu-metallized ingap/gaas hbts using pd/ge/cu ohmic contact to n-type gaas |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/27606966960858836731 |
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