Gated Diode Gain Cell for Low Power Pseudo SRAM Design
碩士 === 國立交通大學 === 電子工程系所 === 94 === The low-power Pseudo SRAM design with 3T1D gain cell and power-gating technique are realized in this thesis. The gated diode acts as a nonlinear capacitance for voltage boosting, where voltage for 1-data is boosted high and voltage for 0-data stays low, achieving...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/mcma3q |