Body Potential Measurement Methods and Pocket Implant Effect on PD-SOI Devices
碩士 === 國立交通大學 === 電子工程系所 === 94 === This thesis studies device properties of partially depleted (PD) SOI nMOSFETs. The first part of the study contains the discussion and development of body potential measurement methods for the floating body (FB) PD-SOI devices, while the second part contains the i...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70080239789085105932 |