Electrical Stress Effects and Device Modeling of RF MOSFETs
博士 === 國立交通大學 === 電子工程系所 === 94 === Silicon RF MOSFETs are now widely-used for wireless communications, due to improvements of their RF noise and high frequency gain performance as the technology has evolved. The major technology challenges for Si RF ICs compared with their III-V counterparts are th...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67184445119721712812 |