Performance Enhancement in Thin-Film-Transistors with Poly-Si Nanowire Channels
碩士 === 國立交通大學 === 電子工程系所 === 94 === In this study, a novel nanowire (NW) transistor was fabricated and characterized. Two methods were explored to reduce leakage current of the newly-proposed nanowire devices. One is to insert a Si3N4 layer in between the gate oxide and gate in the top gate-to-drain...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/48761519011527493160 |