The Study of Flash Memory with High-K Material and Nano-crystal Trapping Layer
碩士 === 國立交通大學 === 電子工程系所 === 94 === In this thesis, first a tri-gate 55nm SONOS-type memories on SOI with HfSiOx nanocrystal trapping layers was proposed and demonstrated. We use CHE programming, FN programming, BTBHH erasing and FN erasing for the memory operation. Experimental results reveal that...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44176968672899862260 |