Study on the Mobility and Reliability of Low Temperature Poly-Si Thin-Film Transistors
碩士 === 國立交通大學 === 電子工程系所 === 94 === In this thesis, first, we studied the new structure of poly-Si TFTs with capping silicon nitride passivation layer. It was found that this device have better electrical characteristic than convention poly-Si TFTs. We enhanced electron mobility and on current due t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08507345015622621955 |