Design to Enhance Turn-on Uniformity of Multi-Finger ESD Protection Devices
碩士 === 國立交通大學 === 電子工程系所 === 94 === To sustain the required ESD levels, the device size of NMOS used in ESD protection circuit is often designed with large device dimensions, which are often drawn with the multi-finger layout style to reduce the total occupied silicon area. However, because of the o...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06121128597368466573 |