A Study of Electrical Properties under Various Process Conditions for SiGe Nanowire
碩士 === 國立交通大學 === 電子工程系所 === 94 === In the thesis, we successfully utilize the spacer to fabricate a SiGe nanowire, which oxidized at different temperatures, times, discussion the germanium content relative electrical analysis under the variant condition, and make the comparison with the conventiona...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2006
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Online Access: | http://ndltd.ncl.edu.tw/handle/35664311425128049703 |