A Study of Electrical Properties under Various Process Conditions for SiGe Nanowire

碩士 === 國立交通大學 === 電子工程系所 === 94 === In the thesis, we successfully utilize the spacer to fabricate a SiGe nanowire, which oxidized at different temperatures, times, discussion the germanium content relative electrical analysis under the variant condition, and make the comparison with the conventiona...

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Bibliographic Details
Main Authors: Heng-Hsin Wu, 吳恆信
Other Authors: Kow-Ming Chang
Format: Others
Language:en_US
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/35664311425128049703