A Study of Electrical Properties under Various Process Conditions for SiGe Nanowire

• Main Authors: Heng-Hsin Wu, 吳恆信
• Other Authors: Kow-Ming Chang
• Format: Others
• Language: en_US
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/35664311425128049703

碩士 === 國立交通大學 === 電子工程系所 === 94 === In the thesis, we successfully utilize the spacer to fabricate a SiGe nanowire, which oxidized at different temperatures, times, discussion the germanium content relative electrical analysis under the variant condition, and make the comparison with the conventional Poly-Si nanowire. All the SiGe films are deposition on SiO2 by cold-wall ultrahigh vacuum chemical vapor deposition (UHVCVD). We utilize Scanning Electron Microscopy (SEM) to observe the silicon germanium nanowire size before oxidation and after oxidation, discovery silicon germanium nanowire and silicon germanium thin film has the same oxidized tendency under the same oxidation condition. Additionally we also can utilized the technology of Ge condensation to makes a smaller nanowire, increases its conductivity.