Investigation of High-K Material HfO2 on Metal-Insulator-Metal Capacitor
碩士 === 國立交通大學 === 電子工程系所 === 94 === Abstract Continuous down-scaling of the size of metal–insulator–metal (MIM) capacitors is required to reduce chip size and the cost of analog and RF ICs. The use of a high-k dielectric is the only way to achieve this goal, since decreasing the dielectric thick...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04957264503747184756 |