Investigation of High-K Material HfO2 on Metal-Insulator-Metal Capacitor
碩士 === 國立交通大學 === 電子工程系所 === 94 === Abstract Continuous down-scaling of the size of metal–insulator–metal (MIM) capacitors is required to reduce chip size and the cost of analog and RF ICs. The use of a high-k dielectric is the only way to achieve this goal, since decreasing the dielectric thick...
Main Authors: | Shiou-Hau Hsu, 許修豪 |
---|---|
Other Authors: | Jen-Chung Lou |
Format: | Others |
Language: | en_US |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/04957264503747184756 |
Similar Items
-
The Investigation of Metal-Insulator-Metal Capacitor Applying High-k Dielectrics Material
by: Huang, Ching-Chien, et al.
Published: (2009) -
The Investigation of Metal-Insulator-Metal Capacitor Using High-k as Dielectrics
by: Kuo-Cheng Chiang, et al.
Published: (2007) -
The Investigation of Metal-Gate/High-k CMOSFETs、Metal-Insulator-Metal Capacitor and MONOS Non-Volatile Memory Applying High-k Dielectric Materials
by: Lin, Shih-Hao, et al.
Published: (2009) -
High-k Dielectrics For Metal-Insulator-Metal Capacitors
by: Revathy, P
Published: (2016) -
The Conduction Mechanism and the Reliability Properties of Metal(Al)/HfO2/Si Capacitors
by: 張啟新
Published: (2005)