Investigation of HfO2/SiON gate stack on the Characteristics of nMOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 94 === As the conventional SiO2-based gate insulator scales down to 1.0nm-1.5nm, a large direct tunneling leakage current generates through ultra-thin oxide. Utilizing high-k dielectric to replace SiO2-based gate as an insulator to eliminate high leakage current is neces...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15705933228932439318 |