Characteristic and Investigation of High-k (HfAlOxNy) Dielectric on MOS Devices
碩士 === 國立交通大學 === 電子工程系所 === 94 === According to the scaling rules, aggressive scaling has led to silicon dioxide (SiO2) gate dielectrics as ultra thin in state-of-the-art CMOS technologies. As a consequence, static leakage power due to direct tunneling through the gate oxide has been increasing at...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57402008819128637390 |