The Electrical and Physical Properties of Hf(Zr)-oxynitride Gate Dielectrics on Ge Substrates with Various Surface Pretreatments
碩士 === 國立交通大學 === 電子工程系所 === 94 === We have systematically investigated the electrical and physical properties of HfOxNy and ZrOxNy gate dielectrics on Ge substrates with different surface pretreatments, including CF4 plasma pretreatment, NH3 plasma pretreatment and Si2H6 passivation. We found that...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19438961106799229057 |