GaAs-based 1.3um lasers grown by MBE
博士 === 國立交通大學 === 電子物理系所 === 94 === The main purpose of this dissertation is to investigate quantum dot (QDs) growth mechanism and to optimize the material quality of GaAs based compound semiconductor telecommunications laser applications. Our final goal is to demonstrate high performance vertical c...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59985410334506030686 |