Oxide Etch in Shallow Trench Isolation
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備學 === 94 === Due to photo resist is widely used in pattern definition with semiconductor process, we need photo resist to protect active region when silicon dioxide inside the shallow trench isolation etch .The thesis studies the high selectivity in oxide over ni...
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| Format: | Others |
| Language: | zh-TW |
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2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55852764983108910898 |