Study of Shallow Trench Isolation Gap Filling Capability for Advanced DRAM by Chemical Vapor Deposition
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備學 === 94 === In this thesis, we explored the extendibility of shallow trench isolation (STI) gap filling capability of undoped silicate glass (USG) prepared by high aspect ratio process (HARP) in sub-atmosphere chemical vapor deposition (SACVD) systems for sub-70...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41610688803739803030 |