The Crystallization Mechanism and the Mobility Model of Poly-Si TFTs annealed by Solid-State Nd:YAG Laser
碩士 === 國立交通大學 === 顯示科技研究所 === 94 === Recently, low temperature polycrystalline silicon thin-film transistors (TFTs) have been investigated extensively for their wide applications. In order to achieve high quality poly-Si at low process temperature, laser crystallization technology is a promising met...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/41176630211110846677 |