Ge Quantum-Dots Formed by Selective Oxidation of a-Si:H/a-SiGe:H Multilayer and Fabrication of Ge Quantum-Dots MSM Photodetectors
碩士 === 國立中央大學 === 電機工程研究所 === 94 === Ge-rich quantum-dots embedded in an oxide matrix have been fabricated by oxidizing the as-deposited hydrogenated amorphous Si0.91Ge0.09 layer or hydrogenated amorphous Si/Si0.91Ge0.09 multilayer. The formation of Ge-rich quantum-dots was realized by the Ge atoms’...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/qkk6s2 |