Characterization and modeling of InGaP HBT
博士 === 國立中央大學 === 電機工程研究所 === 94 === In this study, the characteristics of GaAs based HBTs are studied by using small-signal equivalent and DC measurement which includes the dc current gain, the electron saturation velocity, and the temperature dependence effect. The new small-signal equivalent circ...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/avr7gn |