The thermal effect of the Ar ion beam induced the topography abd the oxidation of silicon
碩士 === 國立中央大學 === 機械工程研究所 === 94 === In the industry of semiconductor it used many ways for well quality of SiO2. In my paper I use the way of IBIO to make it. First I put my sample into the vacuum chamber, second the sample is heated up 650℃, then I put oxygen into the chamber around the sample, fi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72wkda |