Study of electric and magnetic properties on magnetic tunnel junction cells
碩士 === 國立彰化師範大學 === 物理學系 === 94 === A new breed of magnetic random access memory (MRAM) based on a magnetic tunnel junction (MTJ) storage element has emerged as a promising candidate for nonvolatile memory application. The objective of this thesis is mainly to investigate the electric and magnetic p...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70138415554873060461 |