Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance
碩士 === 國立中山大學 === 物理學系研究所 === 94 === Electroreflectance spectra of AlGaN/GaN heteostructure were measured for various biased voltage (Vbias). There are Franz-Keldysh oscillations (FKOs) exhibiting above band gap of AlGaN, and strength of electric field of AlGaN (FAlGaN) can be evaluated from periods...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76547583355347081862 |
| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 94 === Electroreflectance spectra of AlGaN/GaN heteostructure were measured for various biased voltage (Vbias). There are Franz-Keldysh oscillations (FKOs) exhibiting above band gap of AlGaN, and strength of electric field of AlGaN (FAlGaN) can be evaluated from periods of the FKOs. A positive polarization charge
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