Photoluminescence of InN grown by PAMBE
碩士 === 國立中山大學 === 物理學系研究所 === 94 === Unintentionally doped InN thin films have been epitaxially grown on Si (111) by plasma-assisted molecular-beam epitaxy (PAMBE) with AlN buffer layers. The optical characteristics were investigated with photoluminescence (PL). In analyzing the PL spectra, we loo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86080650163442416880 |