Photoluminescence of InN grown by PAMBE

• Main Authors: Wei-chun Chou, 周葦俊
• Other Authors: Li-wei Tu
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/86080650163442416880

碩士 === 國立中山大學 === 物理學系研究所 === 94 === Unintentionally doped InN thin films have been epitaxially grown on Si (111) by plasma-assisted molecular-beam epitaxy (PAMBE) with AlN buffer layers. The optical characteristics were investigated with photoluminescence (PL). In analyzing the PL spectra, we look into the variations in peak positions, intensities, and full－width －at－half maximum (FWHM) by changing the temperature and the laser power. To cover both the visible and IR spectral ranges, two different detectors were used, PMT for the visible and PbS for the near-IR. A single namely, dominant peak was found in the near-IR regime. The temperature dependent PL line-shape is fitted with the Varshni equation. Excitation laser power dependent PL is found to follow a linear relation. The energy band gap of InN is inferred from the optical measurements.