Study on the characteristics GaSb device
碩士 === 國立中山大學 === 電機工程學系研究所 === 94 === This study presents the GaSb epitaxial grown by molecular beam epitaxy (MBE) on the semi-insulating GaAs substrate and n+-GaAs substrate. Investigations are made to the effect of Sb4/Ga beam equivalent pressure (BEP) ratios on the current-voltage characteristic...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/75917791333890455011 |