Investigation on electrical analysis and hot carrier effect of 65nm MOSFETs under External Mechanical Stress

碩士 === 國立中山大學 === 電機工程學系研究所 === 94 === Semiconductor technology has already got into nanometer scale. As the dimension keeping scaling down, we can get more transistor in the same area, and furthermore the frequency and performance are also enhanced. But nowadays the development of the lithography t...

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Bibliographic Details
Main Authors: Wei-Te Ho, 何韋德
Other Authors: Herng-Yih Ueng
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/76850299128146432804