| Summary: | 碩士 === 國立中山大學 === 電機工程學系研究所 === 94 === Semiconductor technology has already got into nanometer scale. As the dimension keeping scaling down, we can get more transistor in the same area, and furthermore the frequency and performance are also enhanced. But nowadays the development of the lithography technology has come to the neck; we must find another way to improve the performance of transistor. In this study, we fully discuss the electrical characteristics and the hot carrier effect as the channel of the N-MOSFETs being strained.
In order to strain the channel, silicon substrate is bent by applying external mechanical stress, the lattice of channel will be strained after applying uniaxial tensile stress. Therefore, we successfully improve drain current and carrier mobility of NMOS, and the increasing rates are 22% and 30% respectively.
In addition, we can understand the influence of hot carrier effect on strain silicon by bending silicon substrate with external mechanical stress. With the increase of curvature, substrate current goes up. We offer an explanation to verify this result.
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