Characterization of Silicon and Gallium Arsenide MOS Structures with Titanium Oxide as dielectric layer
碩士 === 國立中山大學 === 電機工程學系研究所 === 94 === For MOCVD-TiO2/Si MOS structure, oxygen vacancy and grain boundary are the main defects of polycrystalline TiO2 films. They are the main mechanisms for the leakage current. In order to improve the problems, oxygen annealing treatment is often used for filling o...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22549632566430449586 |