PhotoElectroChemical Etching of n-Gallium Nitride by 365nm UV-LED
碩士 === 國立清華大學 === 光電工程研究所 === 94 === Because wet etching poses many advantages over dry etching, development of GaN wet etching has drawn more and more attentions in recent years. First of all, wet etching avoids surface damages and thus improves both device characteristics and production yield. Sec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87204382909745870014 |