Inelastic Electron Tunneling Spectroscopy Study on MBE-grown HfO2 Metal-Oxide-Semiconductor System
碩士 === 國立清華大學 === 物理學系 === 94 === Inelastic electron tunneling spectroscopy (IETS) in silicon metal-oxide-semiconductor systems with SiO2, pure HfO2, pure Y2O3, stacked Y2O3/HfO2, and stacked HfO2/Y2O3 as gate dielectrics have all been studied in this work. Information of electrode phonons, dielectr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22666632400445834342 |