Process-Induced Transient Effects in III/V Compound Semiconductor Devices: InGaP/GaAs HBTs and AlGaAs/GaAs pHEMTs
博士 === 國立清華大學 === 電子工程研究所 === 94 === There are two parts in this thesis. Part I focuses on the transient effect in InGaP/GaAs hetero-junction bipolar transistors (HBTs). Part II focuses on the P memory effect and buffer-layer-quality determination using C-V measurement in AlGaAs/GaAs pseudomorphic h...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78030050546245198175 |