Process-Induced Transient Effects in III/V Compound Semiconductor Devices: InGaP/GaAs HBTs and AlGaAs/GaAs pHEMTs
博士 === 國立清華大學 === 電子工程研究所 === 94 === There are two parts in this thesis. Part I focuses on the transient effect in InGaP/GaAs hetero-junction bipolar transistors (HBTs). Part II focuses on the P memory effect and buffer-layer-quality determination using C-V measurement in AlGaAs/GaAs pseudomorphic h...
Main Authors: | Shao-You Deng, 鄧紹猷 |
---|---|
Other Authors: | Joseph Ya-min Lee |
Format: | Others |
Language: | en_US |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/78030050546245198175 |
Similar Items
-
AlGaAs/InGaAs/GaAs pHEMT Model Parameter Extraction and Establishment
by: Guan-Kai Huang, et al.
Published: (2006) -
The Transient Effect of Current Gain in InGaP/GaAs HBTs
by: Shr-Ting Lin, et al.
Published: (2002) -
The Study of Degradation Mechanisms under Accelerated Stress in AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs PHEMTs
by: Chou-Sheng Wang, et al.
Published: (2002) -
Liquid Phase Oxidation on GaAs for the Application to InGaP/GaAs HBTs Passivation
by: Nan-Ying Yang, et al.
Published: (2005) -
The Applications of InGaP/GaAs and AlGaAs/GaAs Hetero- structures in Optoelectronic Devices
by: Hung Pin Shiao, et al.
Published: (1995)