The Fabrication and Characterization of Metal(Al)-Oxide-Si Capacitors and Field-effect Transistors Using Dy2O3 and Sm2O3 Gate Oxide
碩士 === 國立清華大學 === 電子工程研究所 === 94 === Abstract Metal-insulator-semiconductor (MIS) capacitors and n-channel Metal-oxide-semiconductor-field-effective-transistors (MOSFETs) with Sm2O3 and Dy2O3 gate dielectrics were fabricated. The electrical conduction mechanism in Sm2O3 thin films was investi...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/17705595910958225192 |