High- MOSCAP and MOSFET with MBE-grown HfO2
碩士 === 國立清華大學 === 電子工程研究所 === 94 === In this MS thesis, we employed the molecular beam epitaxy (MBE) method to deposit amorphous HfO2 dielectrics (k = 15) on silicon. We have demonstrated for the first time an atomically abrupt HfO2/Si interface free of SiO2 or silicate formation. In addition, TiN m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67257435437889328965 |