A self-consistent study of the electronic properties of an AlGaN/GaN hetero-junction
碩士 === 國立清華大學 === 電子工程研究所 === 94 === Density of the two dimensional electronic gas formed on the interface AlGaN/GaN of HEMT calculated through solving the Poisson and Schrödinger equations self-consistently. Different from other Ⅲ-Ⅴ compounds, due to the difference of lattice constants there is a c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00273888041211076859 |