Damascene Process for Air-gap Cu Interconnects Using Sacrificial layer HSQ
碩士 === 國立清華大學 === 電子工程研究所 === 94 === Abstract The purpose of this study is to fabricate the SiNx capped Cu/Ta/SiO2 air-gap damascene structure. It included the integration of the sacrificial layer HSQ, diffusion barrier layer Ta, copper electroplating, and the passivation layer SiNx. The electric...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14671740737160959218 |