High Transparent and Low Resistance Molybdenum-doped Indium Oxide Ohmic Contact to p-GaN
碩士 === 國立臺灣大學 === 光電工程學研究所 === 94 === Abstract: Ohmic contacts between electrodes and semiconductors play a crucial role in performance of light emitting diodes (LEDs). Up to now, very low resistance ohmic contacts on n-type GaN have been consistently preformed. But for p-type GaN ohmic contacts, it...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82352067612753835214 |