DC and AC Analysis of Dual Material Double Gate SOI MOS Device

碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === This thesis reports an analysis of DC and AC behavior of dual-material (DM) double-gate (DG) fully-depleted (FD) silicon on insulator (SOI) MOS device. In chapter 1, we make an introduction for SOI device and describe its evolution from bulk device and propose...

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Bibliographic Details
Main Authors: Rai-Min Huang, 黃瑞民
Other Authors: 郭正邦
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/47393199130890890942