Fabrication of Ge on Insulator and Device Application
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === In this thesis, a thin layer of germanium is bonded successfully to another silicon wafer capped with about 80 nm SiO2 by direct hydrophilic bonding and hydrogen-induced layer transfer. Lower bonding temperature as 150oC will result in a smoother surface with ro...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/32995024282062440388 |