The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires

碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === Orientation controlled silicon nanowires (SiNWs) have been synthesized under the effect of the electric field via low pressure chemical vapor deposition system. The p-type impurities are used to dope SiNWs and change their resistivity. The electrical characteris...

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Bibliographic Details
Main Authors: Hao-Ming Huang, 黃皓銘
Other Authors: 李嗣涔
Format: Others
Language:en_US
Online Access:http://ndltd.ncl.edu.tw/handle/25975344336542731577